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家輝 發問時間: 社會與文化語言 · 1 0 年前

有哪個好新的英文高手可以幫我翻譯嗎??怎麼翻都看不懂>”<

The devices used in this study were fabricated on 8\" p-type (100) Si wafers with resistivity of 6–9Ω -cm using the standard CMOS technology. After the shallow-trend-isolation(STI) formation, n+/p diodes were then formed with 3.5* 10(15次方)cm-2 of As at 70 keV. On the other hand, the p+/n diodes were fabricated over the deep implanted n-wells by implanting 4*10(15次方) cm-2 of B at 4.5 keV

Two kinds of diode structures were used; one is square diodes with an area of 2.268*10-4 cm2 and the other is comb diode that is STI-intensive with 90 columns and each with an area of 168*1.5 um. The square and comb (STI-intensive)structures are used to determine the mechanism that is responsible for the dominant leakage current component.In addition, n+ and p+ active Kelvin test structures were used to determine the sheet resistance of the silicides.

Current–voltage (I–V) measurements were performed on all active test structures using a sweep voltage from a reverse bias of 4 V to a forward bias of 1 V. The leakage current measurements reported here are for a junction reverse bias of 1.32 V. This corresponds to a 110% of the operating voltage of the ultrathin gate devices. The sheet resistances of the silicided active areas were also measured for various line widths.

The temperature dependence of the leakage mechanism was performed in the temperature range of 25 to 125 ℃ (at 25 ℃interval) for Ni-silicided wafers. The corresponding activation energy was found by extracting the saturation current from the forward I–V curve or the reverse current at a specified bias voltage and plotting log(Is/T4)versus 1/T

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  • 1 0 年前
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    *參考看看 * 用這個研究被使用的裝置在8英吋p的類型(100)Siwafer上面以6和#8211電阻率; 9Ω被做成了。使用標準的CMOS技術的cm。 並且,在淺的傾向孤立(STI)構成後,n+/p二極管與2 3.5*10(15次人)cm-As一起以70keV被形成了。 他方,p+/n二極管,根據深的被注入的n-井上面以4.5注入2 4*10(15次人)cm-B的事,被製作了。二極管的Two種類構造化做的keV被使用了的; 1個是有2.268*10-4cm2的領域的正方形的二極管,並且,是已經一邊在90專欄和各自領域以STI168*徹底的梳子的二極管。1.5 得—。 正方形佔便宜(STI徹底的)構造優勢na漏電流component.決定成為In加添原因的機械裝置被使用,n+,p+積極的Kelvin試驗構造,決定硅化物的座席反抗被使用了。

    測量,是從4v的逆偏壓1v.由於到(連)no前鋒·偏壓使用掃除電壓的事被全部積極的試驗構造實行了。電流和#8211;,電壓,(我和#8211; V) 1.32v.因為This的聯合點逆偏壓對應著超薄層門裝置的操作電壓的110%,在這裡被報告了的漏電流測量值是那樣。 同時,silicided活動領域的座席手向在為了各種各樣的線幅度的被測量了。

    漏出機械裝置的溫度依存是為了Ni-silicidedwafer25?125℃以(25℃的間隔,的)溫度的變動幅度被實行了。 對應的啟動能源,根據與被;#8211指定的偏壓電壓從是與在企圖的我V彎曲或者反方向電流登記的前鋒(/T4)抽出飽和電流的事,對1/T被發現了。

    經一邊在90專欄和各自領域以STI168*徹底的梳子的二極管。1.5 得—。 正方形佔便宜(STI徹底的)構造優勢na漏電流component.決定成為In加添原因的機械裝置被使用,n+,p+積極的Kelvin試驗構造,決定硅化物的座席反抗被使用了。

    測量,是從4v的逆偏壓1v.由於到(連)no前鋒·偏壓使用掃除電壓的事被全部積極的試驗構造實行了。電流和#8211;,電壓,(我和#8211; V) 1.32v.因為This的聯合點逆偏壓對應著超薄�

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