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題目:ZnO thin films by MOCVD

Acknowledgements:

We gratefully acknowledge David Look at Wright State University for the ZnO photoluminescence and Hall measurements. The work is supported in part by the US Department of Energy, under SBIR Phase II Contract No: DEFG02-02ER 83527.

Figure 1 X-ray diffraction results for an epitaxial ZnO film deposited by MOCVD on sapphire at Cermet Inc. The diffraction data was obtained using Copper K alpha radiation.

Figure 2: Resistivity of MOCVD deposited gallium doped ZnO thin films versus material composition.

Figure 3: Prototype display devices fabricated with ZnO transparent conducting oxide coatings on the glass faceplates.

Figure 4: Resistivity versus time for a ZnO film doped with gallium.

Figure 5: Secondary ion mass spectroscopy (SIMS) results for a nitrogen doped ZnO film deposited by MOCVD at Cermet Inc. Nitrogen is a commonly used p-type dopant for ZnO.

Figure 6: Photoluminescence results for a homoepitaxial ZnO film deposited by MOCVD at SMI. The narrow peak width indicates a high quality ZnO film.

Figure 7: Photoluminescence results for a p-type ZnO film deposited by MOCVD at SMI. The photoluminescence results are consistent with a nitrogen acceptor level in the ZnO film.For p-type films, the photoluminescence results are consistent with a nitrogen acceptor level in ZnO.

Hall measurements of MOCVD deposited p-type ZnO films show carrier concentrations up to 4x1018cm-3, mobilities up to 8.3cm2/V-s and bulk resistivities down to 7.7ohm/cm.

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  • ?
    Lv 7
    1 0 年前
    最佳解答

    Acknowledgements: 銘謝

    We gratefully acknowledge David Look at Wright State University for the ZnO photoluminescence and Hall measurements. The work is supported in part by the US Department of Energy, under SBIR Phase II Contract No: DEFG02-02ER 83527.

    我們感謝萊特州立大學的大衛路可為我們作ZnO的光激發螢光譜和霍爾效應測量.本研究部分由能源部贊助.SBIR第二階段的合約號碼是DEFG02-02ER 83527.

    Figure 1 X-ray diffraction results for an epitaxial ZnO film deposited by MOCVD on sapphire at Cermet Inc. The diffraction data was obtained using Copper K alpha radiation.

    圖1. 在Cermet公司用MOCVD在藍寶石上沉積ZnO磊晶薄膜的X光繞設譜.X光是銅的Ka射線

    Figure 2: Resistivity of MOCVD deposited gallium doped ZnO thin films versus material composition.

    圖2. 摻雜鎵,用MOCVD沉積的氧化鋅膜電組對組成的關係.

    Figure 3: Prototype display devices fabricated with ZnO transparent conducting oxide coatings on the glass faceplates.

    圖3. 用玻璃平板上有透明的ZnO氧化物導體複層做出的顯示器元件樣品.

    Figure 4: Resistivity versus time for a ZnO film doped with gallium.

    圖4. 摻雜鎵的氧化鋅膜電組對時間的關係.

    Figure 5: Secondary ion mass spectroscopy (SIMS) results for a nitrogen doped ZnO film deposited by MOCVD at Cermet Inc. Nitrogen is a commonly used p-type dopant for ZnO.

    圖5. 在Cermet公司用MOCVD沉積的摻雜氮的ZnO薄膜的二次離子質譜. 氮是常用於ZnO的p型摻雜物.

    Figure 6: Photoluminescence results for a homoepitaxial ZnO film deposited by MOCVD at SMI. The narrow peak width indicates a high quality ZnO film.

    圖6. 在SMI用MOCVD沉積的均質ZnO磊晶薄膜的光激發螢光譜.窄的波寬顯示高品質的ZnO薄膜.

    Figure 7: Photoluminescence results for a p-type ZnO film deposited by MOCVD at SMI. The photoluminescence results are consistent with a nitrogen acceptor level in the ZnO film.For p-type films, the photoluminescence results are consistent with a nitrogen acceptor level in ZnO. Hall measurements of MOCVD deposited p-type ZnO films show carrier concentrations up to 4x1018cm-3, mobilities up to 8.3cm2/V-s and bulk resistivities down to 7.7ohm/cm.

    圖7. 在SMI用MOCVD沉積的p型ZnO薄膜的光激發螢光譜. 結果與ZnO薄膜內氮受體的程度一致.(下一句是重複的) 對MOCVD沉積出來的p型ZnO薄膜作霍爾效應測量,結果顯示載子高達4x1018/cm3, 流動性高達8.3 cm2/Vs, 體積電阻在7.7 ohm/cm之下.

  • 10 年前

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  • 1 0 年前

    承認:

    我們感激地承認大衛看賴特州立大學為了ZnO光致發光和大廳測定法. 工作美國部門支持部分地的精力,在下面SBIR階段微光契約沒有: DEFG 02-02急診室83527.

    數字1個X射線衍射結果為了epitaxial ZnO電影存放以MOCVD在青玉在金屬陶瓷公司.衍射資料被獲得使用銅Kα輻射.

    數字2: 抵抗力的MOCVD存放鎵上塗料ZnO薄膜對抗材料寫作.

    數字3: 原型陳列設備製造和ZnO透明的引導氧化層準時地玻璃面板.

    數字4: 抵抗力對抗時間為了ZnO電影上塗料和鎵.

    數字5: 次級離子質譜學(西姆)結果為了氮上塗料ZnO電影存放以MOCVD在金屬陶瓷公司.氮通常是使用p-類型攙雜劑為了ZnO.

    數字6: 光致發光結果為了homoepitaxial ZnO電影存放以MOCVD在SMI. 狹窄的頂點寬度人指出高質量ZnO電影.

    數字7: 光致發光結果為了p-類型ZnO電影存放以MOCVD在SMI. 光致發光結果是一致氮受主級在ZnO電影.為了p-類型電影,光致發光結果是一致氮受主級在裡面的ZnO.

    大廳測定法的MOCVD存放p-類型ZnO電影出示載流子流度直到4 x 1018公分3,可動性直到8.3公分2/V-s和體積抵抗力向下到7.7個歐姆/公分....

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