♥丸妞♥ 發問時間: 社會與文化語言 · 1 0 年前

請幫我翻譯一下這篇關於太陽能電池的文章

請給我流暢的翻譯~不要翻譯直接翻的~謝謝

In this paper, we report on the electronic properties of CuInSe2 (CIS). Investigating the dependence of the amplitude and the shape of the DLTS signal on the filling time of the traps with charge carriers allows us to identify the nature of the traps, whether bandlike or localized. Increasing the duration of the filling pulse results in broadening the DLTS signals and shifting the maximum of these signals towards lower temperature, whereas the high-temperature sides coincide. Using a model of the electronic states at the extended defects, which allows us to distinguish between bandlike states and localized ones based on the dependence of the shape of their DLTS-signal on the filling-pulse duration, we relate the electron trap to bandlike states and the hole trap to localized ones.

2. Experimental

The p-type CIS thin films were deposited by physical vapor deposition using the three-stage growth process [1–3] onto molybdenum-coated, soda-lime glass substrates. The final CIS films were Cu-poor. A 50–60 nm thickness of n-type CdS was deposited using chemical bath deposition (CBD) at a bath temperature of about 65 8C. Undoped and Al-doped ZnO layers were deposited using sputtering in Ar/O2 working gas. A layer of 90-nm thickness of undoped ZnO was deposited from a pure ZnO target, followed by an Al-doped ZnO layer of about 120 nm thickness deposited from an Al2O3-doped ZnO target. The ZnO bilayer has a sheet resistance of about 65–70 U/ square. Front contacts of Ni/Al grids were deposited by electron beam evaporation. The areas of our cells were defined by mechanical scribing. A 100-nm-thick MgF2 anti-reflection coating layer was then deposited using sputtering.

2 個解答

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  • 1 0 年前
    最佳解答

    在本文裡, 我們報告關於CuInSe2 電子物產(同邊) 。調查高度的依賴性和DLTS 信號的形狀在陷井的填裝的時期與充電載體允許我們辨認陷井的本質, 是否bandlike 或地方化。增加填裝的脈衝的期間導致擴展DLTS 信號和轉移這些信號最大值往低溫, 但是高溫邊相符。使用電子狀態的模型在延長的瑕疵, 允許我們區別在bandlike 狀態並且地方化的那些之間根據他們的DLTS 信號形狀依賴性對填裝脈衝期間, 我們與bandlike 狀態關係電子陷井和孔陷井與地方化的那些。

    2. 實驗性p 類型同邊薄膜由物理蒸氣證言放置了使用三階段成長過程[ 1-3 ] 鉬上漆, 蘇打- 石灰玻璃基體。最後的同邊影片是Cu 窮的。n 類型CdS 的50-60 毫微米厚度被放置了使用化工浴證言(CBD) 在浴溫度大約65 8C 。Undoped 和Al 被摻雜的ZnO

    層數被放置了使用飛濺在Ar/O2 運作的氣體裡。90 nm undoped ZnO 的厚度層數被放置了從一個純淨的ZnO 目標, 被大約120 毫微米厚度Al 被摻雜的ZnO 層數跟隨被放置從一個Al2.O3 被摻雜的ZnO 目標。ZnO bilayer 有大約65-70 U/ 正方形板料抵抗。Ni/Al 柵格前面聯絡由電子束蒸發放置了。我們的細胞區域由機械劃線定義了。100 nm 厚實的MgF2 anti-reflection 塗層層數然後被放置了使用飛濺。

    參考資料: dr.eye
  • 6 年前

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