鬼小丸 發問時間: 社會與文化語言 · 1 0 年前

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Band structure and fundamental optical transitions in wurtzite AlN

With a recently developed unique deep ultraviolet picoseconds time-resolved photoluminescence (PL) spectroscopy system and improved growth technique, we are able to determine the detailed band structure near the G point of wurtzite (WZ) AlN with a direct band gap of 6.12 eV. Combined with first-principles band structure calculations we show that the fundamental optical properties of AlN differ drastically from that of GaN and other WZ semiconductors. The discrepancy in energy band gap values of AlN obtained previously by different methods is explained in terms of the optical selection rules in AlN and is confirmed by measurement of the polarization dependence of the excitonic PL spectra.

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    Band structure and fundamental optical transitions in wurtzite AlN

    在纖維礦型結構氮化鋁的能帶結構以及基本光學的躍遷

    With a recently developed unique deep ultraviolet picoseconds time-resolved photoluminescence (PL) spectroscopy system and improved growth technique, we are able to determine the detailed band structure near the G point of wurtzite (WZ) AlN with a direct band gap of 6.12 eV.

    以一個最近被開發的獨特深紫外微微秒(10^-12秒)時間解析度的光譜儀系統以及改善的成長技術, 我們已經可以決定纖維礦型結構氮化鋁在接近G-點的詳細能帶結構是一個6.12電子伏特的直接能量間隙。

    Combined with first-principles band structure calculations we show that the fundamental optical properties of AlN differ drastically from that of GaN and other WZ semiconductors. The discrepancy in energy band gap values of AlN obtained previously by different methods is explained in terms of the optical selection rules in AlN and is confirmed by measurement of the polarization dependence of the excitonic PL spectra.

    結合能帶構第一定律的計算, 我們證明氮化鋁的基本光學的特性與氮化鎵以及其它纖維礦型結構的半導體是相當不同的。先前用不同的方法所獲得的氮化鋁的能帶間隙值差異被解釋為是因為在氮化鋁光學的選擇定律, 而經由激子的光發光能譜的極化依存性量測所證實。

    wurtzite 纖維礦型結構

    discrepancy差異,矛盾;不符合

    excitonic激子的

    photoluminescence 光發光

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