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哪位大大可以幫我翻譯下列的英文

Main article: wafer (semiconductor)

A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline cylindrical ingots (boules) up to 300 mm (slightly less than 12 inches) in diameter using the Czochralski process. These ingots are then sliced into wafers about 0.75 mm thick and polished to obtain a very regular and flat surface.

Once the wafers are prepared, many process steps are necessary to produce the desired semiconductor integrated circuit. In general, the steps can be grouped into two areas:

* Front end processing

* Back end processing

Processing

In semiconductor device fabrication, the various processing steps fall into four general categories: deposition, removal, patterning, and modification of electrical properties.

* Deposition is any process that grows, coats, or otherwise transfers a material onto the wafer. Available technologies consist of physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE) and more recently, atomic layer deposition (ALD) among others.

* Removal processes are any that remove material from the wafer either in bulk or selectively and consist primarily of etch processes, either wet etching or dry etching. Chemical-mechanical planarization (CMP) is also a removal process used between levels.

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    Main article: wafer (semiconductor)

    A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline cylindrical ingots (boules) up to 300 mm (slightly less than 12 inches) in diameter using the Czochralski process.

    主要文章︰ 維夫餅乾(半導體) 一個典型的矽片被由被發展成為單聲道水晶的圓柱體的錠(boules)的極其純的矽製造 直到300毫米(稍微不到12英寸) 用使用Czochralski 過程的直徑。

    These ingots are then sliced into wafers about 0.75 mm thick and polished to obtain a very regular and flat surface.

    這些錠然後被把切成片進大約濃和擦亮的0.75毫米的維夫餅乾獲得一正規和平面。 。

    Once the wafers are prepared, many process steps are necessary to produce the desired semiconductor integrated circuit.

    一旦維夫餅乾準備,很多過程台階生產被要求的半導體積體電路是必要的。

    In general, the steps can be grouped into two areas:

    * Front end processing

    * Back end processing

    Processing

    In semiconductor device fabrication, the various processing steps fall into four general categories: deposition, removal, patterning, and modification of electrical properties.

    通常, 那些台階可以被組合成二個地區︰處理*的*前端向後結束processingProcessingIn半導體器件製造, 各種各樣的處理的台階分成4 大類︰ 免職,移動,仿照,以及電特性的修改。

    * Deposition is any process that grows, coats, or otherwise transfers a material onto the wafer.

    *免職是增長的任何過程,外套,或者相反把一種材料轉移到維夫餅乾上。

    Available technologies consist of physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE) and more recently, atomic layer deposition (ALD) among others.

    可提供的技術由物理蒸汽免職(PVD)組成 ,化學蒸汽免職(CVD) ,電化學的免職(ECD) ,分子梁epitaxy(MBE) 並且近年來,原子層免職(乙醛) 及其他。

    * Removal processes are any that remove material from the wafer either in bulk or selectively and consist primarily of etch processes, either wet etching or dry etching.

    *移動過程是或者大批或者有選擇從維夫餅乾除去材料並且主要由蝕刻過程,潮濕的蝕刻法或者干腐蝕組成的任何。

    Chemical-mechanical planarization (CMP) is also a removal process used between levels.

    化學機械planarization(CMP) 也是在水準之間使用的一個移動過程。

    參考資料: Dr.eye + 自己
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