君仔 發問時間: 社會與文化語言 · 10 年前

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THE development of thin-film transistors (TFTs) for nextgeneration

displays has led researchers to investigate materials

with higher mobility and transparency. Among the potential

materials, such as organic, poly-silicon and metal oxide for

next-generation TFTs, wide bandgap ZnO is an excellent candidate

that has several advantages over its competitors. For example,

ZnO is transparent in the visible wavelength range. The

aperture ratio of transparent ZnO TFT-LCDs (liquid crystal displays)

can be much higher than conventional panels, resulting

in less power consumption. Furthermore, polycrystalline ZnO

can be synthesized by low-temperature deposition methods such

as RF(radio frequency) magnetron sputtering [1]–[3], chemical

Manuscript received March 31, 2008; revised September 16, 2008. Current

version published May 13, 2009. This work was supported by Industrial Technology

Research Institute of Taiwan.

C. C. Liu, M. L. Wu, K. C. Liu, S.-H. Hsiao, and Y. S. Chen are with the

Graduate Institute of Photonics and Optoelectronics, National Taiwan University,

Taipei, 106 Taiwan.

G.-R. Lin and J. Huang are with the Graduate Institute of Photonics and Optoelectronics

and the Department of Electrical Engineering, National Taiwan

University, Taipei, 106 Taiwan (e-mail: jjhuang@cc.ee.ntu.edu.tw).

Color versions of one or more of the figures in this paper are available online

at http://ieeexplore.ieee.org.

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已更新項目:

Digital Object Identifier 10.1109/JDT.2008.2009321

vapor deposition [4], sol-gel and chemical bath [5]. Therefore,

ZnO-based TFT circuits are suitable to be fabricated on flexible

substrates for consumer electronics.

2 個已更新項目:

The electrical properties of ZnO TFTs are strongly influenced

by carrier transport in the channel layer. While TFTs

with high current levels are realized by depositing ZnO channel

3 個已更新項目:

layers on Si substrates [6]–[8], devices on transparent glass

substrates typically show relatively lower drain-source currents

( ) around 6 to 60 A when biased at drain–source voltage

( ) and gate–source voltages ( ) around 30–40 V [1]–[5].

4 個已更新項目:

There are several problems that limit the device performance

of ZnO TFTs. Unintentionally doped ZnO exhibits n-type

conductivity, and can be made strongly n-type by growing

1 個解答

評分
  • 10 年前
    最佳解答

    薄膜晶體管(TFTs)的發展nextgeneration的

    顯示帶領研究員調查材料

    更高的流動性和透明度。 在潛力之中

    材料,例如有機,多晶硅和金属氧化物為

    下一代TFTs,寬bandgap ZnO是一名優秀候選人

    那有幾好處超过它的競爭者。 例如,

    ZnO是透明在可看見的波長范围。

    口径比率透明ZnO TFTLCDs (液晶显示)

    高于常規盤區可以,发生

    在较少电力消费。 此外,多晶的ZnO

    可以用低溫證言方法綜合這樣

    當飛濺RF (射频)的磁控管[1] - [3],化學製品

    原稿接受了2008年3月31日; 校正2008年9月16日。 當前

    出版的版本2009年5月13日。 工業技術支持這工作

    臺灣研究所。

    C.C.劉, M.L.吳, K.C.劉, S。- H。Hsiao和Y.S.陳是與

    Photonics和光電子學,国立台湾大学畢業生學院,

    臺北, 106臺灣。

    G. - R。林和J.黃是以Photonics和光電子學畢業生學院

    並且电机工程,全國臺灣的部門

    大學,臺北, 106臺灣(電子郵件: jjhuang@ cc.ee.ntu.edu.tw)。

    一個或更多的顏色版本在本文的圖是線上可以得到的

    http://ieeexplore.ieee.org。

    數字式對象標識符10.1109/JDT.2008.2009321

    蒸气喷镀[4],溶膠凝膠相互轉換和化工浴[5]。 所以,

    基於ZnO的TFT電路是適當被製造在靈活

    家电的基體。

    強烈影響ZnO TFTs電子物產

    由在渠道層數的載體運輸。 當TFTs时

    高電流水平通过放置ZnO渠道體會

    在Si基體[6的]層數- [8],在透明玻璃的設備

    基體典型地顯示相對地更低的排泄來源潮流

    ()大约6到60 A,當偏心在排泄來源電壓

    ()和門來源電壓()大约30-40 V [1] - [5]。

    有限制設備表現的幾個問題

    ZnO TFTs。 無心地被摻雜的ZnO陳列n類型

    傳導性,和可以通过生長強烈做n類型

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